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po wer ma nage m ent & m ulti m ark et m o sf et metall oxide semiconductor field effect transistor dat a she et rev. 2.2 , 2016 - 08 - 04 cool m o s e6 650v coolmos tm e6 power transistor ipx65r600e6
650v coolmos tm e6 power transistor IPD65R600E6, ipp65r600e6 ipa65r600e6 final data sheet 2 rev. 2 . 2 , 201 6 - 08 - 04 1 description features ? extremely low losses due to very low f o m r dson *q g and e oss ? very high commutation ruggedness ? easy to use/drive ? jedec 1) qualified, pb - free plating, available in halogen free mold compound 2) applications pfc stage s, hard switching pwm stages and resonant switching pwm stages e.g. pc silverbox, adapter, lcd & pdp tv, lightning, server, telecom and ups. please note: for mosfet paralleling the use o fferrite beads on the gate or separate totem poles is generally recommended. table 1 key performance parameters parameter value unit v d s @tj max 70 0 v r ds(on) , max 0.6 ? q g , typ 23 nc i d, pulse 18 a e oss @ 4 00v 2 j body diode di/dt 500 a/s type / o rdering code package marking rel a ted links IPD65R600E6 pg - to252 65e6 6 0 0 ifx coolmos webpage ifx design tools ipp65r600e6 pg - to220 ipa65r600e6 pg - to220 fullpak 1) j - std20 and jesd22 2) for pg - to252: non - halogen free (opn: IPD65R600E6bt); halogen free (opn: IPD65R600E6at) coolmos tm is a revolutionary technology for high voltage power mosfets, designed according to the superjunction (sj) principle and pioneered by infineon technologies. coolmos tm de series combines the experience of the leading sj mosfet supplier with high class innovation. the resulting devices provide all benefits of a fast switching sj mosfet while not sacrificing ease of use. extre mely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
650v coolmos tm e6 power transistor IPD65R600E6, ipp65r600e6 ipa65r600e6 final data sheet 3 rev. 2 . 2 , 201 6 - 08 - 04 table of contents 1 description ................................ ................................ ................................ ................................ .......... 2 2 maximum ratings ................................ ................................ ................................ ................................ 4 3 thermal characteristics ................................ ................................ ................................ ..................... 5 4 electrical characteristics ................................ ................................ ................................ ................... 5 5 electrical characteristics diagrams ................................ ................................ ................................ .. 8 6 test circuits ................................ ................................ ................................ ................................ ...... 13 7 package outlines ................................ ................................ ................................ .............................. 14 8 revision history ................................ ................................ ................................ ............................... 17
650v coolmos tm e6 power transistor IPD65R600E6, ipp65r600e6 ipa65r600e6 final data sheet 4 rev. 2 . 2 , 201 6 - 08 - 04 2 maximum ratings at t j = 25 c, unless otherwise specified. table 2 maximum ratings parameter symbol values unit note/test condition min. typ. max. continuous drain current 1) i d C C 7.3 a t c = 25c C C 4.6 t c = 100c pulsed drain current 2 ) i d , pulse C C 18 t c = 25c averlanche energy, single pulse e as C C 142 mj i d = 1.3 a; v dd = 50v; t c = 25c (see table 1 1) averlanche energy, repetitive e ar C C 0.21 i d =1.3 a, v dd =50v avalanche current, repetitive i ar C C 1.3 a mosfet dv/dt ruggedness dv/dt C C 50 v/ns v ds =0480 v gate source voltage v gs - 20 C 20 v static - 30 30 ac (f >1 hz) power dissipation for non fullpak p tot C C 63 w t c = 25c power dissipation for fullpak p tot C C 28 w t c = 25c operating and storage temperature t j , t stg - 55 C 150 c mounting torque to - 220 C C 60 ncm m3 and m3.5 screws mounting torque to - 220 fullpak C C 50 m2.5 screws continous diode forward current i s C C 6.3 a t c = 25 c diode pulse current 2) i s , pulsed C C 18 a t c = 25 c reverse diode dv/dt 3) dv/dt C C 15 v/ns v ds =0480 v, i sd i d , t c = 1 25c (see table 22) maxumum diode commutation speed 3) di f /dt 500 a/s 1) limited by t j, max . maximum duty cycle d=0.75 2) pulse width t p limited by t j, max 3) identical low side and high side switch with identical r g
650v coolmos tm e6 power transistor IPD65R600E6, ipp65r600e6 ipa65r600e6 final data sheet 5 rev. 2 . 2 , 201 6 - 08 - 04 3 thermal characteristics table 3 thermal characteristics to - 220 (ipp65r600e6) parameter symbol values unit note/test condition min. typ. max. thermal resistance, junction - case r thjc C C 2.0 c /w thermal resistance, junction - ambient r thja C C 62 leaded soldering temperature, wavesoldering only allowed at leads t sold C C 260 c 1.6mm (0.063 in.) from case for 10 s table 4 thermal characteristics to - 220 fullpak (ipa 65r600e6) parameter symbol values unit note/test condition min. typ. max. thermal resistance, junction - case r thjc C C 4.5 c/w thermal resistance, junction - ambient r thja C C 80 leaded soldering temperature, wavesoldering only allowed at leads t sold C C 260 c 1.6mm (0.063 in.) from case for 10 s table 5 thermal characteristics to - 252 (IPD65R600E6) parameter symbol values unit note/test condition min. typ. max. thermal resistance, junction - case r thjc C C 2.0 c/w thermal resistance, junction - ambient r thja C C 62 smd version, device on pcb, minimal footprint 35 smd version, device on pcb, 6cm 2 cooling area 1) soldering temperature, wave - &reflowsoldering only allowed t sold C C 260 c reflow msl1 1) device on 40mm*40mm*1.5 epoxy pcb fr4 with 6cm 2 (one layer, 70m thick) copper area for drain connection. pcb is vertical without air stream cooling.
650v coolmos tm e6 power transistor IPD65R600E6, ipp65r600e6 ipa65r600e6 final data sheet 6 rev. 2 . 2 , 201 6 - 08 - 04 4 electrical characteristics electrical characteristics, at t j =25c, unless otherwise specified table 6 static characteristics parameter symbol values unit note/test condition min. typ. max. drain - source breakdown voltage v (br)dss 650 C C v v gs = 0v , i d = 1.0m a gate threshold voltage v gs(th) 2.5 3 3.5 v d s = v gs , i d = 0 . 21 m a zero gate voltage drain current i dss C C 1 a v ds =600 v, v gs =0v, t j =25c C 10 C v ds =600 v, v gs =0v, t j =150c gate - source leakage current i gss C C 100 na v gs = 2 0v, v d s = 0 v drain - source on - state resistance r ds(on) C 0.54 0.6 ? v gs = 1 0 v, i d =2 .1 a, t j = 25c C 1.40 C v gs = 1 0 v, i d =2 .1 a, t j = 1 50 c gate resistance r g C 10.5 C ? f= 1mhz, open drain table 7 dynamic characteristics parameter symbol values unit note/test condition min. typ. max. input capacitance c iss C 440 C pf v gs = 0 v, v ds = 10 0v, f= 1mhz out put capacitance c oss C 30 C effective output capacitance, energy related 1) c o(er) C 21 C v gs = 0 v, v ds = 0480 v effective output capacitance, time related 2 ) c o(tr ) C 88 C i d = const v gs = 0v , v ds = 0 480 v turn - on delay time t d(on) C 10 C ns v dd =400 v v gs =13 v, i d =3.2a, r g = 6.8 ? (see table 20) rise time t r C 8 C turn - off delay time t d( off ) C 64 C fall time t f C 11 C 1) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss 2) c o(tr ) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss
650v coolmos tm e6 power transistor IPD65R600E6, ipp65r600e6 ipa65r600e6 final data sheet 7 rev. 2 . 2 , 201 6 - 08 - 04 table 8 gate charge characteristics parameter symbol values unit note/test condition min. typ. max. g ate to source charge q gs C 2.75 C nc v d d = 480 v, i d = 3.2 a, v gs = 0 to 10 v g ate to drain charge q gd C 12 C gate charge, total q g C 23 gate plateau voltage v plateau C 5.5 C v table 8 reverse diode characteristics parameter symbol values unit note/test condition min. typ. max. diode forward voltage v sd C 0.9 C v v gs =0v, i f =3.2a, t j =25c reverse recovery time t rr C 270 C ns v r =400 v, i f =3.2a, dif/d t =100 a/ s (see table 22) reverse recovery charge q rr C 2.0 C nc peak reverse recovery current i rrm C 13 C a
650v coolmos tm e6 power transistor IPD65R600E6, ipp65r600e6 ipa65r600e6 final data sheet 8 rev. 2 . 2 , 201 6 - 08 - 04 5 electrical characteristics diagrams table 10 power dissipation non fullpak power dissipation fullpak p tot = f(t c ) p tot = f(t c ) table 1 1 max. transient thermal impedance non fullpak max. transient thermal impedance non fullpak z (thjc) =f(tp); parameter: d=t p /t z (thjc) =f(tp); parameter: d=t p /t
650v coolmos tm e6 power transistor IPD65R600E6, ipp65r600e6 ipa65r600e6 final data sheet 9 rev. 2 . 2 , 201 6 - 08 - 04 table 1 2 safe operating area t c =25c non fullpak safe operating area t c =25c fullpak i d =f(v ds ); t c =25c; v gs > 7v; d=0; parameter t p i d =f(v ds ); t c =25c; v gs > 7v; d=0; parameter t p table 1 3 safe operating area t c =80c non fullpak safe operating area t c = 80 c fullpak i d =f(v ds ); t c =80c; v gs > 7v; d=0; parameter t p i d =f(v ds ); t c =80c; v gs > 7v; d=0; parameter t p
650v coolmos tm e6 power transistor IPD65R600E6, ipp65r600e6 ipa65r600e6 final data sheet 10 rev. 2 . 2 , 201 6 - 08 - 04 table 1 4 typ. output characteristics t c =25c typ. output characteristics t c =125c i d =f(v ds ); t j =25c; parameter: v gs i d =f(v ds ); t j =125c; parameter: v gs table 1 5 typ . drain - source on - state resistance drain - source on - state resistance r ds(on) =f(i d ); t j =125 c; parameter: v gs r ds(on) = f(t j) ; i d =4.9a; v gs =10v
650v coolmos tm e6 power transistor IPD65R600E6, ipp65r600e6 ipa65r600e6 final data sheet 11 rev. 2 . 2 , 201 6 - 08 - 04 table 1 6 typ . transfer characteristics typ . gate charge i d =f(v gs ); v ds =20v v gs =f(q gate ), i d =4.9 a pulsed table 1 7 avalanche energy drain - source breakdown voltage e as =f(t j ); i d =1.8 a; v dd =50 v v br(dss) =f(t j ); i d =1.0 ma
650v coolmos tm e6 power transistor IPD65R600E6, ipp65r600e6 ipa65r600e6 final data sheet 12 rev. 2 . 2 , 201 6 - 08 - 04 table 1 8 typ. capacitances typ. c oss stored energy c=f(v ds ); v gs = 0 v; f=1 mhz e oss =f(v ds ) table 1 9 forward characteristics of reverse diode i f = ? (v sd ); parameter: t j
650v coolmos tm e6 power transistor IPD65R600E6, ipp65r600e6 ipa65r600e6 final data sheet 13 rev. 2 . 2 , 201 6 - 08 - 04 6 test circuits table 20 switching times test circuit and waveform for inductive load switching times test circuit for inductive load switching time waveform table 1 1 unclamped inductive load test circuit unclamped inductive waveform table 22 test circuit for diode characteristics diode recovery waveform v d s v g s v d s v g s t d ( o n ) t d ( o f f ) t f t o n t r t o f f 1 0 % 9 0 % v d s i d v d s v d v ( b r ) d s i d v d s
650v coolmos tm e6 power transistor IPD65R600E6, ipp65r600e6 ipa65r600e6 final data sheet 14 rev. 2 . 2 , 201 6 - 08 - 04 7 package outlines figure 1 outlines to - 252, , dimensions in mm/inches
650v coolmos tm e6 power transistor IPD65R600E6, ipp65r600e6 ipa65r600e6 final data sheet 15 rev. 2 . 2 , 201 6 - 08 - 04 figure 2 outlines to2 20 , dimensions in mm/inches
650v coolmos tm e6 power transistor IPD65R600E6, ipp65r600e6 ipa65r600e6 final data sheet 16 rev. 2 . 2 , 201 6 - 08 - 04 figure 3 outlines to2 20 fullpak , dimensions in mm/inches
650v coolmos tm e6 power transistor IPD65R600E6, ipp65r600e6 ipa65r600e6 final data sheet 17 rev. 2 . 2 , 201 6 - 08 - 04 8 revision history we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: erratum@infineon.com edition 2011 - 12 - 0 9 published by infineon technologies ag 81726 munich, germany ? 2011 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties a nd liabilities of any kind, including without limitation, warranties of non - infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the ne arest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. the infineon technologies component described in this data sheet may be used in life - support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of infine on technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. life support devic es or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. revision history : 201 6 - 0 8 - 0 4 , rev. 2 . 2 previous revision: revision subjects (major changes since last version) 2.0 release of final data sheet 2.1 update halogen free mold compound status of pg - to252 package 2.2 update pg - to220 fullpak drawing on page 16
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